Assistant Professor
Electronics and Communication Engineering
National Institute of Technology Nagaland, India
1
Metal Oxide Nanostructures Fabrication, Memristor & Memcapacitor, Optoelectronics
Nanodevice, Thin Film, Nanoparticles based memristor and photodetector applications
Ph.D from National Institute of Technology Nagaland, India
M.E from Sathyabama Institute of Science and Technology Chennai, India
B.Tech from BCV Engineering College Odalarevu, affiliated to Jawaharlal Nehru Technological University Kakinada, India
Guest Faculty at National Institute of Technology Nagaland, from 2024-08-04 to 2025-12-12.
P Meitei, Borish Moirangthem, C Ngangbam, M W Alam, N K Singh*, “Investigation on structural and photodetection properties of Gd2O3 thin films after annealing.” Journal of Materials Science: Materials in Electronics 33, 10705–10714 (2022), DOI: https://doi.org/10.1007/s10854-022-08053-8
Borish Moirangthem, P Meitei, A K Debnath, N K Singh*, “Forming-Free RRAM Device Based on HfO2 Thin Film for Non-Volatile Memory Application using E-beam evaporation method.” Journal of Materials Science: Materials in Electronics (2023) 34:306, DOI: https://doi.org/10.1007/s10854-022-09809-y
Borish Moirangthem, M W Alam, N K Singh*, “Fast switching photodetector based on HfO? thin film deposited using electron beam evaporation technique.” Applied Physics A: Materials Science and Processing (2023) 129:622, DOI: https://doi.org/10.1007/s00339-023-06907-4
Borish Moirangthem, N K Almulhem, M W Alam, N K Singh*, “Improved performance for Ag nanoparticles-assisted HfO? thin film-based memcapacitive device” Sensors and Actuators: A Physical 370 (2024) 115246, DOI: https://doi.org/10.1016/j.sna.2024.115246
M W Alam, A Jamir, B Longkumer. B Souayeh, S Sadaf, Borish Moirangthem*, “Bipolar resistive switching behavior of bilayer ?-Ga2O3/WO3 thin film memristor device” Journal of Alloys and Compounds 1010 (2025) 177032, DOI: https://doi.org/10.1016/j.jallcom.2024.177032
Naorem Kheljit Singh, Borish Moirangthem*, Loushambam Herojit Singh*, "Enhanced resistive switching performance in WO?/NiO bilayer thin film," Sensors and Actuators A: Physical 394 (2025) 116924, DOI: https://doi.org/10.1016/j.sna.2025.116924
