Assistant Professor
Department of Electronics and Communication Engineering
Indian Institute of Technology Kharagpur
8
Travelling, Reading
Semiconductor Devices, Electronic Materials, Sensor/Detectors
Ph. D. in Semiconductor Devices and Solid State Gas Sensors from Indian Institute of Technology Kharagpur
M. Tech. in Nano Science and Technology from Jadavpur University
M. Sc. in Electronics from Vidyasagar University
Assistant Professor at SR University, Warangal, from 2025-08-26 to .
Postdoctoral Research Associate at University of Arkansas, USA, from 2021-04-02 to 2025-08-15.
Assistant Professor at Brainware University, Kolkata, from 2020-02-01 to 2020-12-31.
Senior Technical Consultant at Accurion Scientific Instruments Pvt. Ltd., from 2019-02-01 to 2020-01-20.
National Post-Doctoral Fellow at Indian Institute of Technology Mandi, from 2017-02-01 to 2019-01-31.
Ph.D
PG
UG
S. Majumdar, S. Shaik, S. Das, R. Kumar, A. Bag, A. Chakraborty, M. Mahata, S. Ghosh, D. Biswas, “Temperature dependent etching of Gallium Nitride layers grown by PA- MBE”, International Conference on Microwave and Photonics (ICMAP-2015), ISM Dhanbad.
S. Majumdar, S. Das, D. Biswas, “Barrier layer engineering: Performance evaluation of E-mode InGaN/AlGaN/GaN HEMT”’, AIP Conf. Proc., 1675, 020021, 2015.
M. Mahata, S. Ghosh, S. Jana, P. Mukhopadhyay, A. Bag, S. M. Dinara, R. Kumar, S. Das, A. Chakrabarty, “Growth and characterization of Al0.15Ga0.85As/GaAs pseudomorphic heterostructure by MBE”, IEEE TechSym 2014, IIT Kharagpur.
R. Kumar, P. Mukhopadhyay, A. Bag, S. K. Jana, S. Das, M. K. Mahata, S. M. Dinara, and D. Biswas “Comprehensive study of AlGaAs/GaAs heterostructures grown by MBE: Structural and compositional analysis” 2nd ICEE held in Bangalore, Dec 2014.
S. Das, S. Majumdar, R. Kumar, M. K. Mahata, S. M. Dinara, D. Biswas “Comprehensive modeling of gas sensor based on Si3N4 passivated AlGaN/GaN Schottky diode” 2nd ICEE held in Bangalore, Dec 2014.
Subhashis Das, S. Majumdar, R. Kumar, A. Chakraborty, A. Bag, D. Biswas, “Simplified Gas Sensor Model Based On AlGaN/GaN Heterostructure Schottky Diode”, AIP Conf. Proc., 1675, 020014, 2015.
Bhaskar Roy, Shubhankar Majumdar, Subhashis Das, “Temperature dependent gas sensor model for Schottky diode based on InAlN/GaN heterostructure”, AIP Conf. Proc., Vol. 2352, No. 1, pp. 020051, Aug, 2021.
Indu Kumari, Subhashis Das, Ankush Bag, “Selective UV Detection by AlGaN/GaN Based MSM Photodetector for Integration with Silicon”, IEEE Sensors 2018. (Poster Presentation). Doi: 10.1109/ICSENS.2018.8589777
Subhashis Das, Shubhankar Majumdar, Saptarsi Ghosh, Ankush Bag, Satinder K. Sharma, Dhrubes Biswas, “Acetone adsorption characteristics of Pd/AlGaN/GaN heterostructure grown by PAMBE: A kinetic interpretation at low temperature”, IEEE Sensors 2018. (Oral Presentation). Doi: 10.1109/ICSENS.2018.8589545
Shiv Kumar, Arnab Mondal, Anand Pandey, Subhashis Das, Ankush Bag, “Exploring Phase and Bandgap Variations in Gallium Oxide Using Mist-based Chemical Vapor Deposition System”, 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2024, Bangalore, KA, India.
Apurba Chakraborty, Saptarsi Ghosh, Subhashis Das, Ankush Bag and Dhrubes Biswas, “Effect of AlGaN Barrier Thickness on Trapping Characteristics in AlGaN/GaN Heterostructures”, The Physics of Semiconductor Devices, Springer International Publishing, Series Vol. 215, Series ISSN: 0930-8989, ISBN: 978-3-319-97604-4, pp. 183-186, 2019. DOI: 10.1007/978-3-319-97604-4_28.
Subhashis Das, Ankush Bag, Saptarsi Ghosh, Satinder K. Sharma and Dhrubes Biswas, “Effect of Si3N4 Passivation on the Acetone Sensing Performance of Pd/AlGaN/GaN Heterostructure”, The Physics of Semiconductor Devices, Springer International Publishing, Series Vol. 215, Series ISSN: 0930-8989, ISBN: 978-3-319-97604-4, pp. 875-879, 2019. DOI: 10.1007/978-3-319-97604-4_131.
M. K. Mahata, S. Ghosh, S. Das, D. Biswas, “Universal Band Gap Determination Model for Doped Semiconductor Materials”, ECS Solid State Letters, Vol. 4, pp. P98 - P101, 2015.
A. Hazra, S. Das, J. Kanungo, E. Bontempi, C. K. Sarkar, P. Bhattacharyya, S. Basu, “Influence of temperature, voltage and hydrogen on the reversible transition of electrical conductivity in sol-gel grown nanocrystalline TiO2 thin film”, J Mater Sci: Mater Electron, Vol. 24, pp. 1658-1663, 2013.
R. Kumar, P. Mukhopadhyay, A. Bag, S. Kr. Jana, A. Chakraborty, S. Das, M. K. Mahata, and D. Biswas, "Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness" Appl. Surf. Sci., Vol. 324, pp. 304-309, 2015.
A. Hazra, S. Das, J. Kanungo, C. K. Sarkar, S. Basu, “Studies on a resistive gas sensor based on sol-gel grown nanocrystalline p-TiO2 thin film for fast hydrogen detection,” Sensors and Actuators B, Vol. 183, pp. 87-95, 2013.
Rahul Kumar, Ankush Bag, Partha Mukhopadhyay, Subhashis Das, and Dhrubes Biswas, “Comparison of Different Grading Schemes in InGaAs Metamorphic Buffers on GaAs Substrate: Tilt Dependence on Cross-Hatch Irregularities,” Appl. Surf. Sci., Vol. 357, pp. 922-930, 2015.
Ankush Bag, Subhashis Das, and Dhrubes Biswas, “Observation of in-situ reciprocal lattice evolution of AlGaN/InGaN on Si (111) through GaN and AlN interlayers by RHEED and reflectance”, Phys. Status Solidi C, Vol. 13, No. 5-6, pp. 186-189, 2016.
Rahul Kumar, Ankush Bag, Partha Mukhopadhyay, Subhashis Das, and Dhrubes Biswas, “Investigation of Cross-Hatch Surface and Study of Anisotropic Relaxation and Dislocation on InGaAs on GaAs (001)”, Electron. Mater. Lett., Vol. 12, No. 3, pp. 356-364, 2016.
Saptarsi Ghosh, Syed M. Dinara, Mihir Mahata, Subhashis Das, Partha Mukhopadhyay, Sanjay Kumar Jana, and Dhrubes Biswas, “On the different origins of electrical parameter degradation in reverse-bias stressed AlGaN/GaN HEMTs”, Phys. Status Solidi A, Vol. 213, No. 6, pp. 1559-1563, 2016.
Apurba Chakraborty, Saptarsi Ghosh, Partha Mukhopadhyay, Sanjay K Jana, Syed Mukulika Dinara, Ankush Bag, Mihir K. Mahata, Rahul Kumar, Subhashis Das, Palash Das, and Dhrubes Biswas, “Reverse Bias Leakage Current Mechanism of AlGaN/InGaN/GaN Heterostructure”, Electron. Mater. Lett., Vol. 12, No. 2, pp. 232-236, 2016.
Ankush Bag, Shubhankar Majumdar, Subhashis Das, Dhrubes Biswas, “Probing InGaN immiscibility at AlGaN/InGaN heterointerface on silicon (111) through two-step capacitance-voltage and conductance-voltage profiles”, Materials and Design, Vol. 133, pp. 176-185, 2017.
Apurba Chakraborty, Saptarsi Ghosh, Partha Mukhopadhyay, Subhashis Das, Ankush Bag, Dhrubes Biswas, “Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis”, Superlattices and Microstructures, Vol. 113, pp. 147-152, 2018.
Saptarsi Ghosh, Subhashis Das, Syed M. Dinara, Ankush Bag, Apurba Chakraborty, Partha Mukhopadhyay, Sanjay K Jana, Dhrubes Biswas, “OFF-state Leakage and Current Collapse in AlGaN/GaN HEMTs: a Virtual Gate Induced by Dislocations”, IEEE Transactions on Electron Devices, Vol. 65, No. 4, pp. 1333-1339, Apr. 2018.
Shivani Sharma, Robin Khosla, Subhashis Das, Hitesh Shrimali and Satinder K. Sharma, “High-Performance CSA-PANI based Organic Phototransistor by Elastomer Gratings”, Organic Electronics, Vol. 57, pp. 14-20 Mar. 2018.
Ankush Bag, Subhashis Das, Partha Mukhopadhyay and Dhrubes Biswas, “Observation and Analysis of Kink Effect during Drain Current Inception of GaN HEMT“, Superlattices and Microstructures, vol. 120, pp. 101-107, May. 2018.
Ankush Bag, Subhashis Das, Rahul Kumar and Dhrubes Biswas, “Evolution of Lateral V-defects on InGaN/GaN on Si(111) during PAMBE: A Role of Strain on Defect Kinetics”, CrystEngComm, Vol. 20, pp. 4151-4163, Jul. 2018.
Shivani Sharma, Subhashis Das, Robin Khosla, Hitesh Shrimali, and Satinder K. Sharma, “Highly UV sensitive Sn Nanoparticles blended with polyaniline onto Micro-Interdigitated Electrode Array for UV-C detection applications”, J Mater Sci: Mater Electron, Vol. 30, No. 8, pp. 7534-7542, 2019.
Shivani Sharma, Subhashis Das, Robin Khosla, Hitesh Shrimali, Satinder K. Sharma, “Realization and Performance Analysis of Facile Processed ?-IDE based multi-layer HfS2/HfO2 Transistors”, IEEE Transactions on Electron Devices, Vol. 66, No. 07, pp. 3236-3241, Jul. 2019.
Manoj Kumar Yadav, Arnab Mondal, Subhashis Das, Satinder K. Sharma, Ankush Bag, “Impact of Annealing Temperature on Band-alignment of PLD Grown Ga2O3/Si (100) Heterointerface”, Journal of Alloys and Compounds, Vol. 819, pp. 153052-1 – 153052-7, Apr. 2020.
Shivani Sharma, Subhashis Das, Robin Khosla, Hitesh Shrimali, Satinder K. Sharma,‘‘ Two-Dimensional van der Waals Hafnium Disulfide and Zirconium Oxide-based Micro-Interdigitated Electrodes Transistors‘‘, IEEE Transactions on Electron Devices, Vol. 70, No. 4, pp. 1520-1526, Apr, 2023.
Emmanuel Wangila, Peter Lytvyn, Hryhorii Stanchu, Calbi Gunder, Fernando Maia de Oliveira, Samir Saha, Subhashis Das, Nirosh Eldose, Chen Li, Mohammad Zamani-Alavijeh, Mourad Benamara, Yuriy I Mazur, Shui-Qing Yu, Gregory J Salamo,“ Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy“, Crystals, Vol. 13, No. 11, pp. 1557, Oct. 2023.
Nirosh M. Eldose, Hryhorii Stanchu, Subhashis Das, Ilias Bikmukhametov, Chen Li, Satish Shetty, Yuriy I. Mazur, Shui-Qing Yu, and Gregory J. Salamo, “Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–xSnx Epilayers Grown by MBE at Different Temperatures“, Crystal Growth & Design, Vol. 23, No. 11, pp. 7737-7743, Oct. 2023.
Satish Shetty, Andrian Kuchuk, Fernando Maia de Oliveira, Serhii Kryvyi, Chen Li, Paul Minor, Mohammad Zamani-Alavijeh, Nirosh M Eldose, Subhashis Das, Dinesh Baral, Yuriy Mazur, H. Alan Mantooth, Gregory Salamo, "Improved Quality of InN Thin films using a thin InGaN Compressive Strain Gradient Layer", Crystal Growth & Design, Vol. 24, pp. 6115-6123, Aug, 2024.
Subhashis Das, Shubhankar Majumdar, Rahul Kumar, Saptarsi Ghosh, Dhrubes Biswas, “Thermodynamic Analysis of Acetone sensing in Pd/AlGaN/GaN heterostructure Schottky diodes at low temperatures,” Scripta Materialia, Vol. 113, pp. 39-42, Mar. 2016.
Subhashis Das, Ankush Bag, Rahul Kumar, Dhrubes Biswas, “Fast Response (7.6s) Acetone Sensing by InGaN/GaN on Si (111) at 373 K” IEEE Electron Device Letters, Vol. 38, No. 3, pp. 383-386, Mar. 2017.
Subhashis Das, Saptarsi Ghosh, Rahul Kumar, Ankush Bag, and Dhrubes Biswas, “Highly Sensitive Acetone Sensor Based on Pd/AlGaN/GaN Resistive Device Grown by Plasma-assisted Molecular Beam Epitaxy”, IEEE Transactions on Electron Devices, Vol. 64, No. 11, pp. 4650-4656, Nov. 2017.
Subhashis Das, Shivani Sharma and Satinder K. Sharma, “Facile Synthesis of 2D-HfS2 Flakes for ?-IDE based Methanol Sensor: Fast Detection at Room Temperature", IEEE Sensors Journal, Vol. 19, No. 20, pp. 9090-9096, Oct. 2019.
Subhashis Das, Nirosh M. Eldose, Hryhorii Stanchu, Fernando Maia de Oliveira, Mourad Benamara, Yuriy I. Mazur, Zhong Chen, Alan Mantooth, and Gregory J. Salamo,“Epitaxial growth and characterization of GaAs (111) on 4H-SiC“, Journal of Vacuum Science & Technology A, Vol. 42, No. 4, pp. 042702, Jul, 2024.
The objective of this project was to demonstrate the gas sensing performance of two-dimensional TMDs at low temperature as well as room temperature and to evaluate the reaction rates, activation energies of adsorption and desorption of gas molecules on 2D materials, and to demonstrate the thermodynamics and kinetics involved in the process of adsorption and desorption of gases on the TMDs. The expected output and outcome of the proposal was to bandgap controlled stable gas sensing material based on 2d TMDs.
