Assistant Professor
Computer Science and Artificial Intelligence
Academy of Scientific and Innovative Research ((CSIR CEERI campus))
3 years in research
Hardware implementation of AI, ML based modelling for Semiconductor and Photonics devices
Photo-neuromorphic devices, Artificial neurons, Device simulation using ML modelling
PhD in optoelectronics Engineering from AcSIR (CSIR CEERI campus)
M. Tech in Nanotechnology from Jadavpur University
B. Tech in Electronics and Communication Engineering from WBUT
Assistant Professor at SR University, Warangal, from 2025-10-06 to .
Postdoctoral Research Fellow at Nanyang Technological University, Singapore, from 2022-06-27 to 2025-09-24.
Ph.D
PG
UG
R. K. Mondal, V. Chatterjee, S. Singh, S. M. Islam, and S. Pal, “Optimization of structure parameters for highly efficient AlGaN based deep ultraviolet light emitting diodes,” Superlattices and Microstructures, vol. 112, pp. 339–352, Dec. 2017, doi: 10.1016/j.spmi.2017.09.043.
R. K. Mondal, V. Chatterjee, and S. Pal, “Effect of step-graded superlattice electron blocking layer on performance of AlGaN based deep-UV light emitting diodes,” Physica E: Low-dimensional Systems and Nanostructures, vol. 108, pp. 233–237, Apr. 2019, doi: 10.1016/j.physe.2018.11.022
R. K. Mondal, V. Chatterjee, S. Prasad, and S. Pal, “Suppression of efficiency droop in AlGaN based deep UV LEDs using double side graded electron blocking layer,” Semicond. Sci. Technol., vol. 35, no. 5, p. 055031, May 2020, doi: 10.1088/1361-6641/ab7ce6.
R. K. Mondal, V. Chatterjee, and S. Pal, “Efficient Carrier Transport for AlGaN-Based Deep-UV LEDs With Graded Superlattice p-AlGaN,” IEEE Trans. Electron Devices, vol. 67, no. 4, pp. 1674–1679, Apr. 2020, doi: 10.1109/TED.2020.2974408.
R. K. Mondal, V. Chatterjee, and S. Pal, “AlInGaN-based superlattice p-region for improvement of performance of deep UV LEDs,” Optical Materials, vol. 104, p. 109846, Jun. 2020, doi: 10.1016/j.optmat.2020.109846.
R. K. Mondal, V. Chatterjee, and S. Pal, “Correlation between performance and compositional grading in quantum well of deep UV-LED,” Optik, vol. 210, p. 164510, May 2020, doi: 10.1016/j.ijleo.2020.164510.
R. K. Mondal, S. Adhikari, V. Chatterjee, and S. Pal, “Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies,” Materials Research Bulletin, vol. 140, p. 111258, Aug. 2021, doi: 10.1016/j.materresbull.2021.111258.
R. K. Mondal, V. Chatterjee, and S. Pal, “Hole Transport in Ultraviolet Light-Emitting Diode via p-Type Injection Channel,” IEEE Trans. Electron Devices, vol. 68, no. 5, pp. 2320–2325, May 2021, doi: 10.1109/TED.2021.3064784
R. K. Mondal, V. Pandey, V. Chatterjee, and S. Pal, “Light extraction efficiency improvement through double sided periodic photonic structures for deep UV light emitting diodes,” Opt Quant Electron, vol. 53, no. 4, p. 190, Apr. 2021, doi: 10.1007/s11082-021-02840-z.
R. K. Mondal et al., “Enhanced Performance of Ultraviolet AlGaN/GaN Photo?HEMTs by Optimized Channel Isolation Schemes,” Adv. Opt. Mat., vol. 12, no. 12, p. 2302602, Apr. 2024, doi: 10.1002/adom.202302602
R. K. Mondal, Y. J. Kim, Y. Liao, Z. Zheng, J. Dai, and M. Kim, “Top-down micro and nano structuring of wide bandgap semiconductors for ultraviolet photodetection,” J. Mater. Chem. C, vol. 13, no. 17, p. 3145, Jan 2025, doi: 10.1039/D4TC03230F.
R. K. Mondal, F. I. Alzakia, R. Lingaparthi, N. Dharmarasu, K. Radhakrishnan and M. Kim, “Demonstration of AlGaN/GaN HEMT-based Non-classical Optoelectronic Logic Inverter,” App. Phy. Lett., vol. 126, no 17, p. 172101, Apr. 2025, doi: 10.1063/5.0259594.
R. K. Mondal, Y. J. Kim, and M. Kim, “Ultraviolet transparent optoelectronic synapse for stealth mode trajectory tracking and registration,” Opt. lett., vol. 50, no 12, p. 3864, Jun. 2025, doi: 10.1364/OL.565162.
R. K. Mondal, R. Lingaparthi, N. Dharmarasu, K. Radhakrishnan and M. Kim., “Outperforming Transparent Ultraviolet Photodetectors based on AlGaN/GaN HEMTs on SiC,” ACS App. Mat. Int., vol. 17, no 32, p. 45888, Aug. 2025, doi: 10.1364/OL.565162.