Assistant Professor
Electronics and Communication Engineering (ECE)
IIIT Allahabad, Prayagraj
4.5
Advanced opto-electronic devices, Thin film fabrication Topological Insulator materials
Material Science and their application in low power consuming optoelectronic devices
Ph.D in Physics from IIIT Allahabad, Prayagraj, India
M.Sc. in Physics (Electronics) from CSJM University Kanpur
B.Sc. (Physics, Mathematics, Military Studies) from CSJM University Kanpur
Assistant Professor at GLA University, Mathura, from 2023-07-01 to 2025-05-31.
PG
UG
Proximity induced band gap opening in topological-magnetic heterostructure (Ni80Fe20/p-TlBiSe2/p-Si) under ambient condition R. Singh, G. K. Maurya, V Gautam, et.al. Scientific Reports 13 (1), 22290 (2023), DOI: https://doi.org/10.1038/s41598-023-49004-5
Dual-quadrant photodetection in topological insulator and silicon-based heterojunction (n-Bi2Te2Se/p-Si) G. K. Maurya, F. Ahmad, P. Kumar, et.al. Applied Surface Science 565, 150497 (2021), DOI: https://doi.org/10.1016/j.apsusc.2021.150497
UV to NIR tunable photodetector using Bi2Te2Se/n-GaN heterojunction G. K. Maurya, F. Ahmad, P. Kumar, et.al. Surfaces and Interfaces 32, 102152 (2022), DOI: https://doi.org/10.1016/j.surfin.2022.102152
Visible to near-infrared broadband photodetector employing thin film topological insulator heterojunction (p-TlBiSe2/ nSi) diode G. K. Maurya, R. Singh, F. Ahmad, et.al. Applied Surface Science 612, 155813 (2023), DOI: https://doi.org/10.1016/j.apsusc.2022.155813
Topological Insulator TlBiSe2/GaN Vertical Heterojunction Diode for High Responsive Broadband UV to NearInfrared Photodetector G. K. Maurya, V Gautam, S. Verma, et.al. Journal of Electronic Materials 53 (3), 1561-1576 (2024), DOI: https://doi.org/10.1007/s11664-023-10889-7
Emerging vertically stacked n-Bi2Te2Se/p-Bi2Te3 topological insulator heterojunction for high-performance selfpowered photosensor G. K. Maurya, V Gautam, S. K. Verma, et.al. Journal of Materials Science: Materials in Electronics 35 (24), 1627 (2024), DOI: https://doi.org/10.1007/s10854-024-13381-y
Enhanced wide band spectral photodetection (UV-NIR) and high detectivity investigated in topological p-TlBiSe2/n- ITO heterojunction G. K. Maurya, S. K.Verma, P. Kumar, et.al. Materials Science in Semiconductor Processing 193, 109513 (2025), DOI: https://doi.org/10.1016/j.mssp.2025.109513
Qualified Graduate Aptitude Test in Engineering (GATE) for Physics awarded by NCB-GATE (2018)
