Assistant Professor
Electronics and Communication Engineering
NIT Patna
0 years 3 months
2D materials, nanoscale devices
2D materials for nanoelectronic devices
Mail: maheshuni@sru.edu.in
Ph.D. from NIT Patna, Patna, Bihar
M.Tech from NIT Patna, Patna, Bihar
B.Tech in ACE Engineering college, Affiliated to Jawaharlal Nehru Technological University Ghatkesar Hyderabad-500039
Assistant professor at SR University, from 2024-08-09 to .
F M. S. Krishna and S. Singh, “Disconnected N-doped zigzag ZnO nanoribbon for potential negative differential resistance (NDR) applications,” Microelectronics Journal, vol. 115, 2021, Art. no. 105204.
F M. S. Krishna, S. Singh, S. Kharwar, and A. Srivastava, “Nitrogen doped armchair ZnO nanoribbons for potential rectification applications: DFT analysis,” Superlattices and Microstructures, vol. 159, 2021, Art. no. 107051.
M. S. Krishna, S. Singh, M. Batool, H. M. Fahmy, K. Seku, A. E. Shalan, S. Lanceros- Mendez, and M. N. Zafar, “A review on 2D-ZnO nanostructures based biosensors: From materials to devices,” Materials Advances, 2022.
M. S. Krishna and S. Singh, “Fluorinated zigzag ZnO nanoribbons for negative differential resistance-based nanoelectronic devices: First-principles investigation,” Journal of Electronic Materials, vol. 51, no. 6, pp. 3288–3298, 2022.
M. S. Krishna S. Singh, and M. K. Mohammed “Carcinogenic heavy metals detection based on ZnO nanoribbons,” IEEE Sensors Journal, vol. 22, pp. 16929-16937, 2021.
M. S. Krishna and S. Singh, “Detection of carcinogenic heavy metals using ZnO nanoribbons (ZnONRs): Ab-initio analysis,” Physica E: Low-dimensional Systems and Nanostructures, vol. 142, 2022, Art. no. 115289.
M. S. Krishna, S. Singh, and B. K. Kaushik, “Copper passivated zigzag MgO nanoribbons for potential nanointerconnect applications,” IEEE Open Journal Nanotechnology, vol. 3, pp. 220–226, 2022.
F S. Kharwar, M. S. Krishna, S. Singh, and K. K. Jha, “Hydrogenated/Fluorinated Phase Borophene Nanoribbons as Nano-Interconnects,” IEEE Transactions on Nanotechnology, vol. 21, pp. 801–809, 2022.
M. S. Krishna, S. Singh, and B. K. Kaushik, “Edge Modified Stanene Nanoribbons for Potential Nanointerconnects,” IEEE Transactions on Nanotechnology, vol. 22, pp. 1– 8, 2022.
M. S. Krishna, S. Singh, and B. K. Kaushik, “Nitrogen-doped zinc oxide nanoribbons for potential resonant tunneling diode applications,” Physical Chemistry Chemical Physics, vol. 25, pp. 16 889–16 895, 2023.
M. S. Krishna and S. Singh, “Selective edge hydrogenated armchair ZnO nanoribbons for negative differential resistance based nanoelectronic devices,” Physica E: Low Dimensional Systems and Nanostructures, vol. 147, 2023, Art. no. 115570.
M. S. Krishna, S. Singh, and B. K. Kaushik, “Edge Tailored MgO Nanoribbons for Spintronics Applications: A First Principle Investigations,” IEEE Transactions on Electron Devices, vol. 70, no. 7, pp. 3551–3558, 2023.
M. S. Krishna S. Singh, and B. K. Kaushik, “Planar Quasi-1D Nano-Interconnects Based on Selective Edge Passivated ZnO Nanoribbons,” IEEE Transactions on Nanotechnology, vol. 22, pp. 597–605, 2023
M. S. Krishna S. Singh, and B. K. Kaushik, “Edge tailored MgO nanoribbon for negative differential resistance/nanointerconnect applications,” Computational Material Science,vol. 231, 2024, Art. no. 112570.
M Sankush Krishna, Sangeeta Singh, Saurav Gupta, Brajesh Kumar Kaushik, “Nanointerconnect Design Using Unsaturated Edged Antimonene Nanoribbons: DFT-NEGF Analysis,” IEEE Transactions on Electron Devices,vol. 71, pp. 5066-5072, 2024.
• M. Sankush Krishna, S. Singh, and N. K. Jaiswal, Nanoscale Interconnects Using Tailored Edge Passivated ZnO Nanoribbons, IN Patent, Application no. 202231007237, 2023 (Granted)
• M. Sankush Krishna, S. Singh, and N. K. Jaiswal, Nanointerconnects Based onZigzag Stanene Nanoribbons (SnNRs) via Edge Functionalization, IN Patent, Application no. 202231043396, 2022 (Granted).
• M. Sankush Krishna, S. Singh, and N. K. Jaiswal, Nanointerconnect Design Using Unsaturated Edged Antimonene Nanoribbons, IN Patent, Application no. 202331084957, 2024 (Granted).