Repaka, L., Ajayan, J., Bhattacharya, S. et al. A review of microelectronic AlGaN/GaN HEMT biosensors for the detection of various cancer diseases and bacterial/viral pathogens. Microsyst Technol (2024). https://doi.org/10.1007/s00542-024-05835-4

Deshpande, G., Bhattacharya, S., Ajayan, J. et al. A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications. J. Electron. Mater. 53, 4287–4307 (2024). https://doi.org/10.1007/s11664-024-11177-8

B. Mounika et al., "A Novel LG = 40 nm AlN-GDC-HEMT on SiC Wafer With fT/IDS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers," in IEEE Access, vol. 12, pp. 131906-131914, 2024, doi: 10.1109/ACCESS.2024.3455559.

J. Ajayan, D. Nirmal, P. Mohankumar, B. Mounika, Sandip Bhattacharya, Shubham Tayal, A.S. Augustine Fletcher, Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review, Materials Science in Semiconductor Processing, Elsevier, Volume 151, 106982, 2022. (Impact Factor: 4.644).

B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal, “Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review”, Micro and Nanostructures, Elsevier, Vol. 168, P. 207317, August, 2022 (Impact factor: 3.220).

B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal, Investigation of back barrier material effects on the scalability of Fe-doped recess-gated AlN/GaN HEMTs for next generation RF power electronics, Micro and Nanostructures, Elsevier, Vol. 171, P. 207431, November, 2022 (Impact factor: 3.220).

B. Mounika, J. Ajayan, Sandip Bhattacharya, Investigation on impact of AlxGa1-xN and InGaN back barriers and source-drain spacing on the DC/RF performance of Fe-doped recessed T-gated AlN/GaN HEMT on SiC wafer for future RF power applications, Micro and Nanostructures, Elsevier, Volume 175, 207504, 2023 (Impact factor: 3.220).

B. Mounika, J. Ajayan, Sandip Bhattacharya, An intensive study on effects of lateral scaling and gate metals on the RF/DC performance of recessed T-gated Fe-doped AlN/GaN/SiC HEMTs for future RF and microwave power applications, Microelectronic Engineering, Elsevier, Volume 271-272, 111948, March 2023 (Impact factor: 2.662).

B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal, Amit Krishna Dwivedi,LG = 50 nm T-gated and Fe-doped double quantum well GaN?HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications,Journal of Science: Advanced Materials and Devices,Volume 9, Issue 4,100795,2024.

Mounika, B., Ajayan, J., Panigrahy, A.K. et al. Nanoscale recessed T-gated ScAlN/GaN-HEMT on SiC wafer with graded back-barrier and Fe-doped buffer for future RF power amplifiers: a simulation study. J. Korean Phys. Soc. 86, 31–41 (2025). https://doi.org/10.1007/s40042-024-01222-4.

Lavanya Repaka, J. Ajayan, Sandip Bhattacharya, B. Mounika,Comprehensive evaluation of T-gated AlN/GaN/SiC MOSHEMTs with ZrO2/Al2O3 dielectrics towards performance enhancement through lateral scaling and passivation optimization for power switching and RF applications,Micro and Nanostructures,Volume 199,208080,2025.

Gauri Deshpande, J. Ajayan, Sandip Bhattacharya, B. Mounika, Amit Krishna Dwivedi, D. Nirmal,Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR & communication systems,Results in Engineering,Volume 25, 104156,2025.

Lavanya Repaka, J. Ajayan, Sandip Bhattacharya, B. Mounika,Comprehensive evaluation of T-gated AlN/GaN/SiC MOSHEMTs with ZrO2/Al2O3 dielectrics towards performance enhancement through lateral scaling and passivation optimization for power switching and RF applications,Micro and Nanostructures,Volume 199,208080,2025.