Assistant Professor
Electronics and Communication Engineering
SRM Institute of Science and Technology,Chennai
15 Years
Microelectronics, Embedded System & IoT
III-Nitride & Ultra wide bandgap semiconductors
Ph.D in ECE from SRM Institute of Science and Technology,Kattankulathur,Chennai
M.E in Applied Electronics from Anna University,Coimbatore
B.E in ECE from Anna University ,Chennai
Assistant Professor at SR University ,Warangal, from 2024-08-02 to .
Assistant Professor at Anil Neerukonda Institute of Technology and Sciences, Visakhapatnam , from 2016-06-01 to 2024-05-18.
Assistant Professor at KSR Institute for Engineering and Technology, Tiruchengode, from 2013-12-16 to 2016-05-13.
Assistant Professor at Angel College of Engineering and Technology, Tiruppur. , from 2010-12-03 to 2013-12-09.
Assistant Professor at SSM College of Engineering, Komarapalayam, from 2006-12-04 to 2008-05-02.
PG
UG
Ramkumar Natarajan, Parthasarathy E, Murugapandiyan P. Ultra-wide bandgap Al0.1Ga0.9N double channel HEMT for RF applications. International Journal of RF and Microwave Computer-Aided Engineering. 2022; e23360. https://doi.org/10.1002/mmce.23360 . August 2022. (SCI-IF: 1.987)
Ramkumar Natarajan., Parthasarathy, E. & Murugapandiyan, P. Influence of High-k Passivation Layer on Gate Field Plate AlGaN/GaN/AlGaN Double Heterojunction HEMT. Silicon (2022). (SCI Indexed Journal), https://doi.org/10.1007/s12633-022-01746-z, March 2022.(SCI-IF: 3.4)
Ramkumar Natarajan., Parthasarathy, E. Breakdown Voltage Enhancement of Al0.1Ga0.9 N Channel HEMT with Recessed Floating Field Plate. Silicon 14, 5961–5973 (2022). https://doi.org/10.1007/s12633-021-01322-x (SCI-IF: 3.4)
Ramkumar Natarajan. Enhancement of Blocking Voltage in GaN HEMT Using Stacked Passivation Layer. Silicon 14, 8487–8492 (2022). https://doi.org/10.1007/s12633-021-01646-8 (SCI-IF:3.4)
Ramkumar Natarajan., Murugapandiyan, P., Vigneshwari, N., Mohanbabu, A., Karthikeyan, & Ravi, S. (2024). Investigation of different buffer layer impact on AlN/GaN/AlGaN HEMT using silicon carbide substrate for high-speed RF applications. Micro and Nanostructures, 189(207815), 207815. doi:10.1016/j.micrna.2024.207815 (SCI-IF:3.1)
Baskaran, S., Shunmugathammal, M., Sivamani, C. P.Murugapandiyan, Ramkumar Natarajan, UWBG AlN/?-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications. Silicon (2022). https://doi.org/10.1007/s12633-022-01846-w.(SCI-IF: 3.4)
K. Husna Hamza, D. Nirmal, A.S. Augustine Fletcher, J. Ajayan, Ramkumar Natarajan, Enhanced drain current and cut off frequency in AlGaN/GaN HEMT with BGaN back barrier,Materials Science and Engineering: B,Volume 284,2022,115863,ISSN 0921-5107,https://doi.org/10.1016/j.mseb.2022.115863.(SCI-IF: 4.051)
Fletcher, A.S.A., Nirmal, D., Arivazhagan, L. P.Murugapandiyan, Ramkumar Natarajan, A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations. J. Electron. Mater. (2022). https://doi.org/10.1007/s11664-021-09367-9.(SCI-IF: 1.938)
P. Murugapandiyan, D. Nirmal, Md. Tanvir Hasan, Arathy Varghese, J. Ajayan, A.S. Augustine Fletcher, Ramkumar Natarajan, Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study,Materials Science and Engineering: B, Volume 273, 2021, 115449, ISSN 0921-5107, https://doi.org/10.1016/j.mseb.2021.115449. (SCI-IF: 4.051)
Murugapandiyan, P., Nirmal, D., Ajayan, J. Ramkumar Natarajan, Investigation of Influence of SiN and SiO2 Passivation in Gate Field Plate Double Heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N High Electron Mobility Transistors. Silicon (2021). https://doi.org/10.1007/s12633-020-00899-z. (SCI-IF: 3.4)
P Murugapandiyan ,Md. Tanvir Hasan,V Rajya Lakshmi,Mohd Wasim,J Ajayan, Ramkumar Natarajan, Breakdown voltage enhancement of gate field plate Al0.295Ga0.705N/GaN HEMTs, International Journal of Electronics, Published online: 10 Dec 2020. https://doi.org/10.1080/00207217.2020.1849819. (SCI-IF: 1.336)
K. Husna Hamza, D. Nirmal, A.S. Augustine Fletcher, L. Arivazhagan, J. Ajayan, Ramkumar Natarajan,Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm,AEU - International Journal of Electronics and Communications,Volume 136,2021,153774,ISSN 1434-8411,https://doi.org/10.1016/j.aeue.2021.153774 (SCI-IF: 3.2)
A. Revathy, J. Vijaya Kumar, P. Murugapandiyan, Mohd Wasim, K. Nirmala Devi, Ramkumar Natarajan,Design and analysis of normally-off GaN-HEMT using ?-Ga2O3 buffer for low-loss power converter applications,Micro and Nanostructures,Volume 182,2023,207643,ISSN 2773-0123,https://doi.org/10.1016/j.micrna.2023.207643 (SCI-IF: 3.1)
Murugapandiyan P., Lakshmi V.R., Ramkumar Natarajan., Eswaran P., Wasim M. (2020) GaN-Based High-Electron Mobility Transistors for High-Power and High-Frequency Application: A Review. In: Saini H.S., Singh R.K., Tariq Beg M., Sahambi J.S. (eds) Innovations in Electronics and Communication Engineering. Lecture Notes in Networks and Systems, vol 107. Springer, Singapore. https://doi.org/10.1007/978-981-15-3172-9_33. page no:339 to 348, ISBN:9789811531729, 9811531722. (Springer Lecture notes)
Murugapandiyan, P., Ramkumar Natarajan., Ravi, S. (2023). Ultrawide Bandgap AlGaN-Channel-Based HEMTs for Next-Generation Electronics. In: Lenka, T.R., Nguyen, H.P.T. (eds) HEMT Technology and Applications. Springer Tracts in Electrical and Electronics Engineering. Springer, Singapore. https://doi.org/10.1007/978-981-19-2165-0_1. (Book Chapter)
Ramkumar Natarajan, E. Parthasarathy and P. Murugapandiyan, “High-Performance In0.13Al0.83Ga0.04N/AlN/GaN/In0.04Ga0.96N HEMT for High Power Millimeter Wave Electronics” 2021 IEEE Madras Section Conference (MASCON), 2021, pp. 1-5, doi: 10.1109/MASCON51689.2021.9563373.(IEEE Conference)
These wheelchairs can be manually driven or electrically driven, basic electric wheelchairs can be driven by joystick and voice commands, but people suffering from quadriplegia can’t operate the wheelchair through a joystick. Our designed wheelchair is operated through voice commands.
This invention relates to the field of the Internet of Things (IoT) and electronic engineering, more particularly the design of a groundwater management system to monitor the groundwater extraction levels, alert the user in case of exceeding the limits and thereby proactively manage groundwater resources, mitigate risks associated with seasonal variations, and ensure sustainable utilization of groundwater resource.
Received 10 Lakhs worth of sponsored lab from Texas Instruments.
