Dr. MOUNIKA. B

B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal, Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review, Micro and Nanostructures, Volume 168, 2022, 207317. doi.org/10.1016/j.micrna.2022.207317.

J. Ajayan, D. Nirmal, P. Mohankumar, B. Mounika, Sandip Bhattacharya, Shubham Tayal, A.S. Augustine Fletcher, Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review, Materials Science in Semiconductor Processing, Volume 151, 2022,106982. oi.org/10.1016/j.mssp.2022.106982.

J. Ajayan, P. Mohankumar, D. Nirmal, L.M.I. Leo Joseph, Sandip Bhattacharya, S. Sreejith, Sreedhar Kollem, Shashank Rebelli, Shubham Tayal, B. Mounika, Ferroelectric Field Effect Transistors (FeFETs): Advancements, challenges and exciting prospects for next generation Non-Volatile Memory (NVM) applications, Materials Today Communications, Volume 35, 2023, 105591,doi.org/10.1016/j.mtcomm.2023.105591.

B. Mounika, J. Ajayan, Sandip Bhattacharya, 2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/GaN channel HEMT with graded InGaN Backbarrier on SiC-wafer for next generation RF power electronics applications, Materials Science and Engineering: B, Volume 301, 2024, 117194,doi.org/10.1016/j.mseb.2024.117194.

J. Ajayan, S. Sreejith, Ajith Ravindran, Abraham George, B. Mounika, Recent developments in organic photodetectors for future industrial applications: A review, Sensors and Actuators A: Physical, Volume 387,2025,116459,doi.org/10.1016/j.sna.2025.116459.

B. Mounika, J. Ajayan, Sandip Bhattacharya,An intensive study on effects of lateral scaling and gate metals on the RF/DC performance of recessed T-gated Fe-doped AlN/GaN/SiC HEMTs for future RF and microwave power applications, Microelectronic Engineering, Volumes 271–272, 2023, 111948,doi.org/10.1016/j.mee.2023.111948.

Repaka, L., Ajayan, J., Bhattacharya, S. et al. A review of microelectronic AlGaN/GaN HEMT biosensors for the detection of various cancer diseases and bacterial/viral pathogens. Microsyst Technol 31, 1303–1318 (2025). https://doi.org/10.1007/s00542-024-05835-4

B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal, V. Bharath Sreenivasulu, N. Aruna Kumari, Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications, Microelectronics Journal, Volume 140, 2023, 105923,doi.org/10.1016/j.mejo.2023.105923.

B. Mounika et al., "A Novel LG = 40 nm AlN-GDC-HEMT on SiC Wafer With fT/IDS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers," in IEEE Access, vol. 12, pp. 131906-131914, 2024, doi: 10.1109/ACCESS.2024.3455559.

B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal, Investigation of back barrier material effects on the scalability of Fe-doped recess-gated AlN/GaN HEMTs for next generation RF power electronics, Micro and Nanostructures, Volume 171, 2022, 207431,doi.org/10.1016/j.micrna.2022.207431.

B. Mounika, J. Ajayan, Sandip Bhattacharya,Investigation on impact of AlxGa1-xN and InGaN back barriers and source-drain spacing on the DC/RF performance of Fe-doped recessed T-gated AlN/GaN HEMT on SiC wafer for future RF power applications,Micro and Nanostructures,Volume 175,2023,207504,doi.org/10.1016/j.micrna.2023.207504.

Mounika, B., Ajayan, J., Panigrahy, A.K. et al. Nanoscale recessed T-gated ScAlN/GaN-HEMT on SiC wafer with graded back-barrier and Fe-doped buffer for future RF power amplifiers: a simulation study. J. Korean Phys. Soc. 86, 31–41 (2025). https://doi.org/10.1007/s40042-024-01222-4

Lavanya Repaka, J. Ajayan, Sandip Bhattacharya, B. Mounika, Comprehensive evaluation of T-gated AlN/GaN/SiC MOSHEMTs with ZrO2/Al2O3 dielectrics towards performance enhancement through lateral scaling and passivation optimization for power switching and RF applications, Micro and Nanostructures, Volume 199, 2025, 208080,doi.org/10.1016/j.micrna.2025.208080.

Gauri Deshpande, J. Ajayan, Sandip Bhattacharya, B. Mounika, Amit Krishna Dwivedi, D. Nirmal, Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR & communication systems, Results in Engineering, Volume 25, 2025, 104156,doi.org/10.1016/j.rineng.2025.104156.

B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal, Amit Krishna Dwivedi, LG = 50 nm T-gated and Fe-doped double quantum well GaN‒HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications, Journal of Science: Advanced Materials and Devices, Volume 9, Issue 4, 2024, 100795,https://doi.org/10.1016/j.jsamd.2024.100795.

J. Ajayan, S. Sreejith, B. Mounika, A.S. Augustine Fletcher, Ribu Mathew, M. Saravanan, Puneet Sharma,Inorganic nanocatalysts for energy systems, environmental/industrial processes and healthcare applications: A comprehensive review,Materials Today Sustainability, Volume 32,2025, 101233,doi.org/10.1016/j.mtsust.2025.101233.

Akshaykranth, A., Ajayan, J., Bhattacharya, S. et al. Exploration on the impact of barrier thickness, gate recess, and lateral scaling on AlGaN/GaN SRL HEMT on silicon for future RF power electronics. J Mater Sci: Mater Electron 35, 1006 (2024). https://doi.org/10.1007/s10854-024-12747-6

J. Ajayan, B. Mounika, R. Mathew, A. K. Dwivedi and L. Wouk, "Advances and Exciting Prospects in Forksheet FET Technology for Sustainable Scaling for Future Analog/RF and Digital Integrated Circuit Applications: A Review," in IEEE Transactions on Electron Devices, vol. 72, no. 10, pp. 5283-5293, Oct. 2025, doi: 10.1109/TED.2025.3596940.

Mounika, B., Ajayan, J., Dwivedi, A.K. et al. Electrostatic Analysis of AlN/GaN HEMTs Using β-Ga2O3 Buffer on SiC and β-Ga2O3 Wafers for 5G/6G Wireless Infrastructure and Future Sub-THz Applications. J. Electron. Mater. 55, 3203–3220 (2026). https://doi.org/10.1007/s11664-026-12678-4

Repaka, L., Ajayan, J., Panigrahy, A.K. et al. High-performance AlN/GaN/AlGaN-MOSHEMTs on SiC wafer: scaling and gate material innovations for upcoming radar and communication systems. J. Korean Phys. Soc. 87, 414–429 (2025). https://doi.org/10.1007/s40042-025-01415-5

Mounika, B., Ajayan, J., Mathew, R. et al. Step-graded AlGaN barrier engineering in AlGaN/GaN HEMTs for high-linearity low-noise RF amplifiers. Sci Rep 16, 31452 (2026). https://doi.org/10.1038/s41598-026-61548-w

E. Swarnalatha, B. Mounika, S. Sreejith, A review of GaN HEMTs on β-Ga2O3 substrates for RF and power electronics applications, Micro and Nanostructures, Volume 216, 2026, 208736,https://doi.org/10.1016/j.micrna.2026.208736.

K. Ratna, J. Ajayan, B. Mounika, Recent developments in AlGaN/GaN MOSHEMTs for future high power RF electronics: A review, Micro and Nanostructures, Volume 208, 2025, 208339,https://doi.org/10.1016/j.micrna.2025.208339.

J. Ajayan, S. Sreejith, Ribu Mathew, B. Mounika, Asisa Kumar Panigrahy, Srinivasa Rao Karumuri, Shilagani Shivaprasad, AlGaN/GaN HEMTs with field plate designs for high power and radio frequency applications: A review, Journal of Science: Advanced Materials and Devices, Volume 11, Issue 4, 2026, 101267,doi.org/10.1016/j.jsamd.2026.101267.

J. Ajayan et al., "WSe2-FETs: Device Architectures, Progress in Doping Strategies, Contact Engineering, Reliability Challenges, and Exciting Prospects for Next-Generation Low-Power Nanoelectronics," in IEEE Transactions on Electron Devices, vol. 73, no. 10, pp. 5889-5900, Oct. 2026, doi: 10.1109/TED.2026.3726918.

R Prajwal et al 2026 ECS J. Solid State Sci. Technol. 15 075003

Thanthri, S.S., Valasa, S., Kotha, V.R. et al. Role of Si/dielectric interface traps on the reliability of tree-shaped complementary FETs for sub-3 nm technology nodes. Sci Rep 16, 25503 (2026). https://doi.org/10.1038/s41598-026-57907-2

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UGC NET JRF