Dr. J. AJAYAN

J. Ajayan, B. Mounika, R. Mathew, A. K. Dwivedi and L. Wouk, "Advances and Exciting Prospects in Forksheet FET Technology for Sustainable Scaling for Future Analog/RF and Digital Integrated Circuit Applications: A Review," in IEEE Transactions on Electron Devices, doi: 10.1109/TED.2025.3596940. (Impact Factor: 3.600)

J. Ajayan, P. Mohankumar, R. Mathew, L. R. Thoutam, B. K. Kaushik and D. Nirmal, "Organic Electrochemical Transistors (OECTs): Advancements and Exciting Prospects for Future Biosensing Applications," IEEE Transactions on Electron Devices, Volume 70, 3401 - 3412, July 2023 (Impact Factor: 3.600).

J. Ajayan et al., "WSe2-FETs: Device Architectures, Progress in Doping Strategies, Contact Engineering, Reliability Challenges, and Exciting Prospects for Next-Generation Low-Power Nanoelectronics," in IEEE Transactions on Electron Devices, vol. 73, no. 10, pp. 5889-5900, Oct. 2026, doi: 10.1109/TED.2026.3726918. (Impact Factor: 3.600).

Shubham Tayal, Billel Smaani, Shiromani Balmukund Rahi, Abhishek Kumar Upadhyay, Sandip Bhattacharya, J. Ajayan, Biswajit Jena, Ilho Myeong, Byung-Gook Park, and Young Suh Song, "Incorporating Bottom-Up Approach Into Device/Circuit Co-Design for SRAM-Based Cache Memory Applications," IEEE Transactions on Electron Devices, Vol. 69, No. 11, pp. 6127-6132, November 2022. (Impact factor: 3.600).

J.Ajayan, D.Nirmal, R.Ramesh, Sandip Bhattacharya, Shubham Tayal, L.M.I. Leo Joseph, Laxman Raju Thoutam, D.Ajitha, “A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications’, Measurement, Elsevier, Vol. 186, P. 110100, December, 2021, (Impact factor: 6.100).

37. J. Ajayan, D.Nirmal, Ribu Mathew, Dheena Kurian P.Mohankumar, L.Arivazhagan, D.Ajitha, “A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications”, Materials Science in Semiconductor Processing, Elsevier, Vol. 128, P. 105753, June 2021. (Impact factor: 5.200).

J. Ajayan and D. Nirmal, “A Review of InP/InAlAs\InGaAs Based Transistors For High Frequency Applications”, Superlattices and Microstructures, Elsevier, Vol. 86, No.10, October, 2015, P. 1-19, (Impact factor: 3.300).

J. Charles Pravin, D. Nirmal, P. Prajoon, and J. Ajayan, “Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications. Physica E: Low Dimensional Syst. and Nanostructures, Elsevier, Vol. 83, P. 95-100, 2016, (Impact factor: 2.500).

J. Ajayan and D. Nirmal, “20nm T-Gate Composite channel Enhancement-Mode Metamorphic HEMT on GaAs Substrates For Future THz Applications”, Journal of Computational Electronics, Springer, Vol. 15. No. 4, P. 1291-1296, December, 2016, (Impact factor: 2.800).

J. Ajayan and D. Nirmal, “20 nm High Performance Enhancement Mode InP HEMT With Heavily Doped S/D Regions For Future THz Applications”, Superlattices and Microstructures, Elsevier, Vol. 100, P. 526-534, December, 2016, (Impact factor: 3.300).

J. Ajayan and D. Nirmal, “20nm Enhancement Mode Metamorphic GaAs HEMT With Highly Doped InGaAs Source/Drain Regions For High Frequency Applications”, International Journal of Electronics, Taylor & Franciz Group, Vol. 104, No. 3, P. 504-512, March, 2017, (Impact factor:1.200).

J. Ajayan, T. Ravichandran, P. Prajoon, J. Charles Pravin and D. Nirmal, “Investigation of Breakdown Performance in Lg = 20 nm Novel Asymmetric InP HEMTs for Future High Speed High Power Applications”, Journal of Computational Electronics, Springer, Vol. 17. No. 1, P. 265-272, March, 2018, (Impact factor: 2.800).

J. Ajayan and D. Nirmal, P. Prajoon, J. Charles Pravin, “Analysis of Nanometer-Scale InGaAs/InAs/InGaAs composite Channel MOSFETs Using High-K Dielectrics For High Speed Applications” International Journal of Electronics and Communications, Elsevier, Vol. 79, P. 151-157, September, 2017, (Impact factor: 3.100).

J Ajayan, D Nirmal, Dheena Kurian, P Mohankumar, L Arivazhagan, AS Augustine Fletcher, TD Subash, M Saravanan, “Investigation of impact of gate underlap/overlap on the analog/RF performance of composite channel double gate MOSFETs”, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 37, No. 6, P. 062201, November 2019, (Impact factor: 1.600).

J. Ajayan, D. Nirmal, P. Mohankumar, L. Arivazhagan, “Investigation of Impact of Passivation Materials on the DC/RF Performances of InP-HEMTs for Terahertz Sensing and Imaging”, Silicon, Springer, Vol. 12, P. 1225–1230, April, 2020, (Impact factor: 4.100).

J. Ajayan, D. Nirmal, P. Mohankumar, B. Mounika, Sandip Bhattacharya, Shubham Tayal, A.S. Augustine Fletcher, Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review, Materials Science in Semiconductor Processing, Elsevier, Volume 151, 106982, 2022. (Impact Factor: 5.200).

B. Mounika, J. Ajayan, Sandip Bhattacharya, An intensive study on effects of lateral scaling and gate metals on the RF/DC performance of recessed T-gated Fe-doped AlN/GaN/SiC HEMTs for future RF and microwave power applications, Microelectronic Engineering, Elsevier, Volume 271-272, 111948, March 2023 (Impact factor: 3.300).

J. Ajayan, P. Mohankumar, D. Nirmal, L.M.I. Leo Joseph, Sandip Bhattacharya, S. Sreejith, Sreedhar Kollem, Shashank Rebelli, Shubham Tayal, B. Mounika, “Ferroelectric Field Effect Transistors (FeFETs):Advancements, Challenges and Exciting Prospects for Next Generation Non-Volatile Memory (NVM) Applications”, Materials Today Communications, Elsevier, Volume 35, 105591, June 2023 (Impact factor: 4.900).

B. Mounika, J. Ajayan, Sandip Bhattacharya, “2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/GaN channel HEMT with graded InGaN Back barrier on SiC-wafer for next generation RF power electronics applications”, Materials Science and Engineering: B, Elsevier, Volume 301, 117194, 2024. (Impact factor: 5.700).

J. Ajayan, S. Sreejith, M. Manikandan, Wen-Cheng Lai, Sumit Saha, Terahertz Sensors for Next Generation Biomedical and Other Industrial Electronics Applications: A Critical Review, Sensors and Actuators A: Physical, Volume. 369, 115169, 2024. (Impact factor: 5.100).

J. Ajayan, Recent developments in Terahertz wave detectors for next generation high speed Terahertz wireless communication Systems: A review, Infrared Physics & Technology, Elsevier, Volume 141, 105467, 2024. (Impact Factor: 3.800).

B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal, Amit Krishna Dwivedi, LG = 50 nm T-gated and Fe-doped double quantum well GaN‒HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications, Journal of Science: Advanced Materials and Devices, Elsevier, Volume 9, Issue 4, 100795, 2024. (Impact Factor: 6.900).

J. Ajayan, S. Sreejith, N. Aruna Kumari, M. Manikandan, Sachidananda Sen, Maneesh Kumar, Amorphous indium gallium zinc oxide thin film transistors (a-IGZO-TFTs): Exciting prospects and fabrication challenges, Microelectronic Engineering, Elsevier, Volume 298, 112327, 2025 (Impact Factor: 3.300).

J. Ajayan, S. Sreejith, Ajith Ravindran, Abraham George, B. Mounika, Recent developments in organic photodetectors for future industrial applications: A review, Sensors and Actuators A: Physical, Elsevier, Volume 387, 116459, 2025 (Impact Factor: 5.1).

J. Ajayan, V. B. Sreenivasulu, N. A. Kumari, S. Sreejith and S. Das, "Challenges and Advances in Materials and Fabrication Technologies for the Development of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review," in IEEE Access, vol. 13, pp. 62045-62059, 2025. (Impact Factor: 4.200).

J. Ajayan, A. K. Panigrahy, S. Sen, M. Kumar and S. Tayal, "Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review," in IEEE Access. (Impact Factor: 4.200).

J. Ajayan, S. Sreejith, B. Mounika, A.S. Augustine Fletcher, Ribu Mathew, M. Saravanan, Puneet Sharma, Inorganic nanocatalysts for energy systems, environmental/industrial processes and healthcare applications: A comprehensive review, Materials Today Sustainability, Elsevier, Volume 32, 2025, 101233 (Impact Factor: 9.4).

J. Ajayan, S. Sreejith, M. Manikandan, G. Dhivyasri, Recent developments in nanobiosensors and emerging nanotechnologies for rapid cardiovascular disease detection: a review, Measurement, Volume 270, 2026, 120821 Elsevier, (Impact Factor: 6.1).

J. Ajayan, V. B. Sreenivasulu, A. K. Dwivedi and S. Tayal, "Complementary Field Effect Transistor (CFET) for the 2-nm Technology Node: A Review From Device to Circuit Perspectives," in IEEE Journal of the Electron Devices Society, vol. 14, pp. 58-69, 2026, doi: 10.1109/JEDS.2025.3647724. (Impact Factor: 2.9).

Mounika, B., Ajayan, J., Mathew, R. et al. Step-graded AlGaN barrier engineering in AlGaN/GaN HEMTs for high-linearity low-noise RF amplifiers. Scientific Reports, NATURE, (2026). https://doi.org/10.1038/s41598-026-61548-w. (Impact Factor: 4.900).

J. Ajayan, S. Sreejith, Ribu Mathew, B. Mounika, Asisa Kumar Panigrahy, Srinivasa Rao Karumuri, Shilagani Shivaprasad, AlGaN/GaN HEMTs with field plate designs for high power and radio frequency applications: A review, Journal of Science: Advanced Materials and Devices, Volume 11, Issue 4, 2026, 10126. Elsevier (Impact Factor: 6.900).

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Top 2% Most Influential Scientists (Single Year) in 2022-2026 By Stanford University