J. Ajayan and D. Nirmal, “A Review of InP/InAlAs\InGaAs Based Transistors For High Frequency Applications”, Superlattices and Microstructures, Elsevier, Vol. 86, No.10, October, 2015, P. 1-19, (Impact factor: 2.658).

J. Charles Pravin, D. Nirmal, P. Prajoon, and J. Ajayan, “Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications. Physica E: Low Dimensional Syst. and Nanostructures, Elsevier, Vol. 83, P. 95-100, 2016, (Impact factor: 3.382).

J. Ajayan and D. Nirmal, “20nm T-Gate Composite channel Enhancement-Mode Metamorphic HEMT on GaAs Substrates For Future THz Applications”, Journal of Computational Electronics, Springer, Vol. 15. No. 4, P. 1291-1296, December, 2016, (Impact factor: 1.807).

J. Ajayan and D. Nirmal, “20 nm High Performance Enhancement Mode InP HEMT With Heavily Doped S/D Regions For Future THz Applications”, Superlattices and Microstructures, Elsevier, Vol. 100, P. 526-534, December, 2016, (Impact factor: 2.658).

J. Ajayan and D. Nirmal, “20nm Enhancement Mode Metamorphic GaAs HEMT With Highly Doped InGaAs Source/Drain Regions For High Frequency Applications”, International Journal of Electronics, Taylor & Franciz Group, Vol. 104, No. 3, P. 504-512, March, 2017, (Impact factor:1.336).

J. Ajayan and D. Nirmal, P. Prajoon, J. Charles Pravin, “Analysis of Nanometer-Scale InGaAs/InAs/InGaAs composite Channel MOSFETs Using High-K Dielectrics For High Speed Applications” International Journal of Electronics and Communications, Elsevier, Vol. 79, P. 151-157, September, 2017, (Impact factor: 3.183).

J. Charles Pravin, D. Nirmal, P. Prajoon, N. Mohan Kumar and J. Ajayan, “Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor” Superlattices and Microstructures, Elsevier, Vol. 104, P. 470-476, April, 2017, (Impact factor: 2.658).

J. Ajayan, T. D. Subash and Dheena Kurian, “20 nm High Performance Novel MOSHEMT on InP Substrate For Future High Speed Low Power Applications”, Superlattices and Microstructures, Elsevier, Vol. 109, P. 183-193, September, 2017, (Impact factor: 2.658).

P. Murugapandian, S. Ravimaran, J. William, J. Ajayan and D. Nirmal, “DC and Microwave Characteristics of 20 nm T-gate InAlN/GaN High Electron Mobility Transistor For High Power RF Applications”, Superlattices and Microstructures, Elsevier, Vol. 109, P. 725-734, September, 2017, (Impact factor: 2.658).

J. Ajayan, D. Nirmal, T. Ravichandran, P. Mohankumar, P. Prajoon, L. Arivazhagan and Chandan Kumar Sarkar, “InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review”, International Journal of Electronics and Communications, Elsevier, Vol. 94, P. 199-214, September, 2018, (Impact factor: 3.183).

J. Ajayan, T. Ravichandran, P. Mohankumar, P. Prajoon, J. Charles Pravin and D. Nirmal, “Investigation of DC-RF and Breakdown Behaviour in Lg = 20 nm Novel Asymmetric GaAs MHEMTs for Future Submillimetre Wave Applications” International Journal of Electronics and Communications, Elsevier, Vol. 84, P. 387-393, February, 2018, (Impact factor: 3.183).

J. Ajayan, T. Ravichandran, P. Prajoon, J. Charles Pravin and D. Nirmal, “Investigation of Breakdown Performance in Lg = 20 nm Novel Asymmetric InP HEMTs for Future High Speed High Power Applications”, Journal of Computational Electronics, Springer, Vol. 17. No. 1, P. 265-272, March, 2018, (Impact factor: 1.807).

D. Nirmal, L. Arivazhagan, A. Fletcher, J. Ajayan, and P. Prajoon, “Current Collapse Modeling in AlGaN/GaN HEMT Using Small Signal Equivalent Circuit for High Power Application” Superlattices and Microstructures, Elsevier, Vol. 113, P. 810-820, 2018, (Impact factor: 2.658).

P. Prajoon, M. Anuja Menokey, J. Charles Pravin, J. Ajayan, S. Rajesh and D. Nirmal, “Investigation of Efficiency Enhancement in InGaN MQW LED with Compositionally Step Graded GaN/InAlN/GaN Multi-Layer Barrier”, Superlattices and Microstructures, Elsevier, Vol. 116, P. 71-78, 2018, (Impact factor: 2.658).

J. Ajayan, T. Ravichandran, P. Mohankumar, P. Prajoon, J. Charles Pravin, and D. Nirmal, “Investigation of DC and RF Performance of Novel MOSHEMT on Silicon Substrate for Future Submillimetre Wave Applications”, Semiconductors, Springer, Vol. 52, No. 16, P. 1991-1997, December, 2018, (Impact factor: 0.674).

A.S.Augustine Fletcher, D.Nirmal, J.Ajayan, L.Arivazhagan, “Analysis of AlGaN/GaN HEMT using Discrete Field plate technique for High Power and High Frequency Applications” International Journal of Electronics and Communications, Elsevier, Vol. 99, P. 325-330, February, 2019, (Impact factor: 3.183).

J. Ajayan, D. Nirmal, P. Mohankumar, L. Arivazhagan, M. Saravanan, and S. Saravanan, “LG = 20 nm High Performance GaAs Substrate Based Metamorphic MOSHEMT for Next Generation High Speed Low Power Applications”, Journal of Nanoelectronics and Optoelectronics, ASP, Vol. 14, No. 8, P. 1133-1142, August, 2019, (Impact factor: 0.961).

J. Ajayan, T. Ravichandran, P. Mohankumar, P. Prajoon, J. Charles Pravin & D. Nirmal, “Investigation of RF and DC Performance of E-Mode In0.80Ga0.20As/InAs/In0.80Ga0.20as Channel based DG-HEMTs for Future Submillimetre Wave and THz Applications”, IETE Journal of Research, Taylor & Franciz Group, Vol. 67, No. 3, P. 366-376, December, 2021, (Impact factor: 2.333).

P.Mohankumar, J.Ajayan, R.Yasodharan, P.Devendran, R.Sambasivam, “A review of micromachined sensors for automotive applications”, Measurement, Elsevier, Vol. 140. P. 305-322, July, 2019, (Impact factor: 3.927).

L.Arivazhagan, D.Nirmal, D.Godfrey, J.Ajayan, P.Prajoon, A.S.Augustine Fletcher, A.Amir Anton Jone, J.S.Raj Kumar, “Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications”, International Journal of Electronics and Communications, Elsevier, Vol. 108, P. 189-194, August, 2019, (Impact factor: 3.183).

Ajayan, D. Nirmal, P. Mohankumar, Dheena Kuriyan, A.S. Augustine Fletcher, L. Arivazhagan, B. Santhosh Kumar, “GaAs metamorphic high electron mobility transistors for future deepspace-biomedical-millitary and communication system applications:A review”, Microelectronics Journal, Elsevier, Vol. 92, P. 104604-1-18, October 2019, (Impact factor: 1.607).

J Ajayan, D Nirmal, Dheena Kurian, P Mohankumar, L Arivazhagan, AS Augustine Fletcher, TD Subash, M Saravanan, “Investigation of impact of gate underlap/overlap on the analog/RF performance of composite channel double gate MOSFETs”, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 37, No. 6, P. 062201, November 2019, (Impact factor: 1.416).

M Manikandan, D Nirmal, J Ajayan, P Mohankumar, P Prajoon, L Arivazhagan, “A review of blue light emitting diodes for future solid state lighting and visible light communication applications”, Superlattices and Microstructures, Elsevier, Vol. 136, P. 106294, December 2019, (Impact factor: 2.658).

J. Ajayan, D. Nirmal, P. Mohankumar, L. Arivazhagan, “Investigation of Impact of Passivation Materials on the DC/RF Performances of InP-HEMTs for Terahertz Sensing and Imaging”, Silicon, Springer, Vol. 12, P. 1225–1230, April, 2020, (Impact factor: 2.670).

J.Ajayan, D.Nirmal, P.Mohankumar, M.Saravanan, M.Jagadesh, L.Arivazhagan, “A review of photovoltaic performance of organic/inorganic solar cells for future renewable and sustainable energy technologies”, Superlattices and Microstructures, Elsevier, Vol. 143, P. 106549, July 2020, (Impact factor: 2.658).

AS Augustine Fletcher, D Nirmal, L Arivazhagan, J. Ajayan, Arathy Varghese, “Enhancement of Johnson figure of merit in III?V HEMT combined with discrete field plate and AlGaN blocking layer”, International Journal of RF and Microwave Computer?Aided Engineering, Wiley, Vol. 30, No. 2, P. e22040, February 2020, (Impact factor: 1.694).

R Yasodharan, AP Senthilkumar, J Ajayan, R Sivabalakrishnan, “Investigation and Influence of layer composition of tandem perovskite solar cells for applications in future renewable and Sustainable energy”, Optik, Elsevier, Vol. 212, No. 6, 164723, June 2020, (Impact factor: 2.443).

P. Prakasam, Md. Shohel Sayeed & J. Ajayan, “Guest editorials: P2P computing for 5G, beyond 5G (B5G) networks and internet-of-everything (IoE)”, Peer-to-Peer Networking and Applications, Springer, September, 2020

L. Arivazhagan, D. Nirmal, Subhash Chander, J. Ajayan, D. Godfrey, J. S. Rajkumar and S. Bhagya Lakshmi “Variable thermal resistance model of GaN on SiC with substrate scalability”, Journal of Computational Electronics, Springer, Vol. 19. No. 1, P. 1546–1554, August, 2020, (Impact factor: 1.807).

M. Manikandan, D. Nirmal, J. Ajayan, L. Arivazhagan, P. Prajoon and G. Dhivyasri, Numerical investigation of traps and optical response in III-V nitride quantum LED, Optical and Quantum Electronics, Springer, Vol. 52. P. 513, December, 2020, (Impact factor: 2.084).

P. Mohankumar, J. Ajayan, T. Mohanraj, R. Yasodharan, “Recent developments in biosensors for healthcare and biomedical applications: A review”, Measurement, Elsevier, Vol. 167. P. 108293, January, 2021, (Impact factor: 3.927).

A. S. Augustine Fletcher, D. Nirmal, J. Ajayan & L. Arivazhagan “An Intensive Study on Assorted Substrates Suitable for High JFOM AlGaN/GaN HEMT”, Silicon, Springer, Vol. 13, P. 1591–1598, 2021, (Impact factor: 2.670).

L Arivazhagan, D Nirmal, P Pavan Kumar Reddy, J Ajayan, D Godfrey, P Prajoon, Ashok Ray “A Numerical Investigation of Heat Suppression in HEMT for Power Electronics Application”, Silicon, Springer, Vol. 13, P. 3039–3046, September, 2021, (Impact factor: 2.670).

P Murugapandiyan, Tanvir Hasan, V Rajya Lakshmi, MOHD Wasim, J Ajayan, N Ramkumar, D Nirmal, Breakdown voltage enhancement of gate field plate Al0.295Ga0.705N/GaN HEMTs, International Journal of Electronics, Taylor & Francis, Vol. 108. P. 1273-1287, August, 2021, (Impact factor: 1.336).

P Murugapandiyan, D Nirmal, J Ajayan, Arathy Varghese, N Ramkumar, “Investigation of Influence of SiN and SiO2 Passivation in Gate Field Plate Double Heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N High Electron Mobility Transistors”, Silicon, Springer, Vol. 14, P. 1421–1429,2022, (Impact factor: 2.670).

J. Ajayan, D.Nirmal, Ribu Mathew, Dheena Kurian P.Mohankumar, L.Arivazhagan, D.Ajitha, “A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications”, Materials Science in Semiconductor Processing, Elsevier, Vol. 128, P. 105753, June 2021. (Impact factor: 3.927).

R. Sridevi, J. Charles Pravin, A. Ramesh Babu, J. Ajayan, “Lowering the Schottky Barrier Height by Titanium Contact for High-Drain Current in Mono-layer MoS2 Transistor”, Journal of Electronic Materials, Springer, Vol. 50, P. 3295–3301, March 2021. (Impact factor: 1.938).

A. Karthikeyan, P. Prakasam, S. Karthik, J. Ajayan & S. Sai Gokul, “Automata Theory-based Energy Efficient Area Algorithm for an Optimal Solution in Wireless Sensor Networks”, Wireless Personal Communications, Springer, Vol. 120, P. 1125–1143, September 2021. (Impact factor: 1.671).

Husna Hamza. K, D.Nirmal, A.S.Augustine Fletcher, L.Arivazhagan, J.Ajayan, Ramkumar Natarajan, Highly Scaled Graded Channel GaN HEMT with Peak Drain Current of 2.48 A/mm, International Journal of Electronics and Communications, Elsevier, Vol. 136, P. 153774, July, 2021, (Impact factor: 3.183).

Shubham Tayal, J. Ajayan, L. M. I. Leo Joseph, J. Tarunkumar, D. Nirmal, Biswajit Jena & Ashutosh Nandi, “A Comprehensive Investigation of Vertically Stacked Silicon Nanosheet Field Effect Transistors: an Analog/RF Perspective”, Silicon, Springer, Vol. 12, P. 1225–1230, May, 2021, (Impact factor: 2.670).

J.Ajayan, D.Nirmal, Shubham Tayal, Sandip Bhattacharya, L.Arivazhagan, A.S. Augustine Fletcher, P.Murugapandiyan D.Ajitha, “Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study”, Microelectronics Journal, Vol. 114, P. 105141, August 2021. (Impact factor: 1.607).

J. S. Raj Kumar, D. Nirmal, Manish Kumar Hooda, Surinder Singh, J. Ajayan & L. Arivazhagan, “Intensive Study of Field-Plated AlGaN/GaN HEMT on Silicon Substrate for High Power RF Applications”, Silicon, Springer, Vol. 12, P. 1225–1230, June, 2021, (Impact factor: 2.670).

Shubham Tayal, Sandip Bhattacharya, Biswajit Jena, J. Ajayan, Deboraj Muchahary & Parveen Singla, “Linearity Performance and Harmonic Distortion Analysis of IGE Junctionless Silicon Nanotube-FET for Wireless Applications”, Silicon, Springer, Vol. 12, P. 1225–1230, August, 2021, (Impact factor: 2.670).

J.Ajayan, D.Nirmal, R.Ramesh, Sandip Bhattacharya, Shubham Tayal, L.M.I. Leo Joseph, Laxman Raju Thoutam, D.Ajitha, “A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications’, Measurement, Elsevier, Vol. 186, P. 110100, December, 2021, (Impact factor: 3.972).

A. S. Augustine Fletcher, D. Nirmal, J. Ajayan, L. Arivazhagan, K. Husna Hamza & P. Murugapandiyan, “60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites”, Silicon, Springer, Vol. 12, P. 1225–1230, September, 2021, (Impact factor: 2.670).

P. Murugapandiyan, D. Nirmal, Md.Tanvir Hasan, Arathy Varghese, J.Ajayan, A.S.Augustine Fletcher, N.Ramkumar, “Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study”, Materials Science and Engineering: B, Elsevier, Vol. 273, P. 115449, November, 2021, (Impact factor: 4.050).

L. Arivazhagan, D. Nirmal, Anwar Jarndal, Hasina F. Huq, Subhash Chander, S. Bhagyalakshmi, Pavan Kumar Reddy, J. Ajayan, Arathy Varghese, Applicability of double Channel Technique in AlGaN/GaN HEMT for future biosensing applications, Superlattices and Microstructures, Elsevier, Vol. 160, 107086, December 2021. (Impact factor: 2.658).

Sreedhar Kollem, Katta Ramalinga Reddy, Duggirala Srinivasa Rao, Chintha Rajendra Prasad, V. Malathy, J. Ajayan, Deboraj Muchahary, Image denoising for magnetic resonance imaging medical images using improved generalized cross-validation based on the diffusivity function, International Journal of Imaging Systems and Technology, Wiley, Vol. 160, 107086, December 2021. (Impact factor: 2.000).

S. Sreejith, J. Ajayan, Sreedhar Kollem & B. Sivasankari, “A Comprehensive Review on Thin Film Amorphous Silicon Solar Cells”, Silicon, Springer, Vol. 12, P. 1225–1230, January, 2022, (Impact factor: 2.670).

A. S. Augustine Fletcher, D. Nirmal, L. Arivazhagan, J. Ajayan, Merlin Gilbert Raj, K. Husna Hamza, P. Murugapandiyan & Ramkumar Natarajan, “A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations”, Journal of Electronic Materials, Springer, Vol. 51, P. 1215–1225, 2022. (Impact factor: 1.938).

Sandip Bhattacharya, J. Ajayan, D.Nirmal, Shubham Tayal, Sreedhar Kollem, “Investigation on DC/RF Performance of LG=19 nm Heterogeneous Integrated Ga0.15In0.85As/InAs/Ga0.15In0.85As Composite Channel InP HEMT on Silicon Substrate for Future Beyond 5G and Quantum Computing Application”, Silicon, Springer, Vol. 12, P. 1225–1230, January, 2022, (Impact factor: 2.670).

M. Manikandan, D. Nirmal, J. Ajayan, L. Arivazhagan, P. Prajoon, G. Dhivyasri & M. Jagadeeswari, “Physics based modeling of AlGaN/BGaN quantum well based ultra violet light emitting diodes”, Optical and Quantum Electronics, Springer, Vol. 54, Article number: 168, March 2022, (Impact Factor: 2.084).

Shubham Tayal, Sandip Bhattacharya, J. Ajayan, Laxman Raju Thoutam, Deboraj Muchahary, Sunil Jadav, Bal Krishan & M. Nizamuddin, “Gate-stack optimization of a vertically stacked nanosheet FET for digital/analog/RF applications”, Journal of Computational Electronics, Springer, Vol. 19. No. 1, P. 1546–1554, March, 2022, (Impact factor: 1.807).

J. S. Raj Kumar, D. Nirmal, J. Ajayan & Shubham Tayal, “Investigation on LG?=?50 nm Tapered T-Gated AlGaN/GaN HEMT on Silicon Wafer with a fT/fmax of 264/312 GHz for beyond 5G (B5G) Applications”, Silicon, Springer, Vol. 12, P. 1225–1230, April, 2022, (Impact factor: 2.670).

Shubham Tayal, Sresta Valasa, Sandip Bhattacharya, J. Ajayan, Syed Musthak Ahmed, Biswajit Jena & Keshav Kaushik, “Investigation of Nanosheet-FET Based Logic Gates at Sub-7 nm Technology Node for Digital IC Applications”, Silicon, Springer, Vol. 12, P. 1225–1230, May, 2022, (Impact factor: 2.670).

B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal, “Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review”, Micro and Nanostructures, Elsevier, Vol. 168, P. 207317, August, 2022 (Impact factor: 3.220).

Ajith Ravindran, D. Nirmal, Binola K. Jebalin. I. V, K. P. Pinkymol, P. Prajoon & J. Ajayan, “InGaAs based gratings for UV–VIS spectrometer in prospective mRNA vaccine research”, Optical and Quantum Electronics, Springer, Vol. 54, P. 555, 2022. (Impact Factor: 2.794).

K. Husna Hamza, D. Nirmal, A.S. Augustine Fletcher, J. Ajayan, Ramkumar Natarajan, “Enhanced drain current and cut off frequency in AlGaN/GaN HEMT with BGaN back barrier”, Materials Science and Engineering: B, Elsevier, Volume 284, 115863, 2022. (Impact Factor: 3.407).

J. Ajayan, D. Nirmal, P. Mohankumar, B. Mounika, Sandip Bhattacharya, Shubham Tayal, A.S. Augustine Fletcher, Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review, Materials Science in Semiconductor Processing, Elsevier, Volume 151, 106982, 2022. (Impact Factor: 4.644).

Sreejith, S., Ajayan, J., Devasenapati, B. Sivasankari & Shubham Tayal, A Critical Review on Reliability and Short Circuit Robustness of Silicon Carbide Power MOSFETs. ”, Silicon, Springer, Vol. 15, P. pages623–637, January, 2023. (Impact factor: 2.941).

Sandip Bhattacharya, Subhajit Das, Shubham Tayal, J. Ajayan, Leo Joseph, Tarun Kumar Juluru, Arnab Mukhopadhyay, Sayan Kanungo, Debaprasad Das, Shashank Rebelli, Minimization of crosstalk noise and delay using reduced graphene nano ribbon (GNR) interconnect, Microelectronics Journal, 105533, 2022. (Impact Factor: 1.992).

Sresta Valasa, Shubham Tayal, Laxman Raju Thoutam, J. Ajayan, Sandip Bhattacharya, A critical review on performance, reliability, and fabrication challenges in nanosheet FET for future analog/digital IC applications, Micro and Nanostructures, Elsevier, Vol. 170, P. 207374, October, 2022. (Impact factor: 3.220).

Ajith Ravindran, D. Nirmal, K.P Pinkymol, P Prajoon, J. Ajayan, Subhash Chander, Theoretical Study of TiO2 based UV-VIS Spectrometer Gratings for Assessment of Skin Lesions in Localized Scleroderma, Optik, Elsevier, Vol. 270, P. 170033, November 2022. (Impact factor: 2.840).

Shubham Tayal, Billel Smaani, Shiromani Balmukund Rahi, Abhishek Kumar Upadhyay, Sandip Bhattacharya, J. Ajayan, Biswajit Jena, Ilho Myeong, Byung-Gook Park, and Young Suh Song, "Incorporating Bottom-Up Approach Into Device/Circuit Co-Design for SRAM-Based Cache Memory Applications," IEEE Transactions on Electron Devices, Vol. 69, No. 11, pp. 6127-6132, November 2022. (Impact factor: 3.221).

B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal, Investigation of back barrier material effects on the scalability of Fe-doped recess-gated AlN/GaN HEMTs for next generation RF power electronics, Micro and Nanostructures, Elsevier, Vol. 171, P. 207431, November, 2022 (Impact factor: 3.220).

Sreedhar Kollem, Ch Rajendra Prasad, J. Ajayan, V. Malathy & Akkala Subbarao, Brain tumor MRI image segmentation using an optimized multi-kernel FCM method with a pre-processing stage, Multimedia Tools and Applications, Springer, Vol. 170, P. 207374, October, 2022 (Impact factor: 2.577).

J. Ajayan, D. Nirmal, Binola K. Jebalin, S. Sreejith, Advances in neuromorphic devices for the hardware implementation of neuromorphic computing systems for future artificial intelligence applications: A critical review, Microelectronics Journal, Elsevier, Vol. 130, P. 105634, December, 2022 (Impact factor: 1.992).

Sandip Bhattacharya, Mohammed Imran Hussain, John Ajayan, Shubham Tayal, Louis Maria Irudaya Leo Joseph, Sreedhar Kollem, Usha Desai, Syed Musthak Ahmed, Ravichander Janapati, Analysis of read speed latency in 6T-SRAM cell using multi-layered graphene nanoribbon and cu based nano-interconnects for high performance memory circuit design, ETRI Journal, Wiley, Vol. 170, P. 105634, November, 2022 (Impact factor: 1.622).

S. Sreejith, J. Ajayan, J.M. Radhika, B. Sivasankari, Shubham Tayal, M. Saravanan, A comprehensive review on graphene FET bio-sensors and their emerging application in DNA/RNA sensing & rapid Covid-19 detection, Measurement, Elsevier, Volume 206, 112202, 2023 (Impact factor: 5.131).

B. Mounika, J. Ajayan, Sandip Bhattacharya, Investigation on impact of AlxGa1-xN and InGaN back barriers and source-drain spacing on the DC/RF performance of Fe-doped recessed T-gated AlN/GaN HEMT on SiC wafer for future RF power applications, Micro and Nanostructures, Elsevier, Volume 175, 207504, 2023 (Impact factor: 3.220).

Laxman Raju Thoutam, Ribu Mathew, J. AJAYAN, Shubham Tayal and Shantikumar Nair, A Critical Review of Fabrication Challenges and Reliability Issues in Top/Bottom Gated MoS2 Field-Effect Transistors, Nanotechnology, IOP Science, Volume 34, No. 23, 232001, 2023 (Impact factor: 3.953).

B. Mounika, J. Ajayan, Sandip Bhattacharya, An intensive study on effects of lateral scaling and gate metals on the RF/DC performance of recessed T-gated Fe-doped AlN/GaN/SiC HEMTs for future RF and microwave power applications, Microelectronic Engineering, Elsevier, Volume 271-272, 111948, March 2023 (Impact factor: 2.662).

J. Ajayan, P. Mohankumar, D. Nirmal, L.M.I. Leo Joseph, Sandip Bhattacharya, S. Sreejith, Sreedhar Kollem, Shashank Rebelli, Shubham Tayal, B. Mounika, “Ferroelectric Field Effect Transistors (FeFETs):Advancements, Challenges and Exciting Prospects for Next Generation Non-Volatile Memory (NVM) Applications”, Materials Today Communications, Elsevier, Volume 35, 105591, June 2023 (Impact factor: 3.662).

Ribu Mathew, J. Ajayan, “Material processing, performance and reliability of MoS2 field effect transistor (FET) technology- A critical review”, Materials Science in Semiconductor Processing (Elsevier), Volume 160, 107397, 2023 (Impact Factor: 4.644).

Angen Franklin S, Binola K Jebalin I. V, Subhash Chander, Raj Kumar, Ajayan J and Nirmal D, “Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems”, ECS Journal of Solid State Science and Technology (IOP Science), Volume 12, Number 3, 035006, 2023 (Impact Factor: 2.070).

Sreedhar Kollem, Katta Ramalinga Reddy, Ch. Rajendra Prasad, Avishek Chakraborty, J. Ajayan, S. Sreejith, Sandip Bhattacharya, L. M. I. Leo Joseph, Ravichander Janapati, “AlexNet-NDTL: Classification of MRI brain tumor images using modified AlexNet with deep transfer learning and Lipschitz-based data augmentation”, International Journal of Imaging Systems and Technology (IMA), Wiley, Volume 160, 107397, 2023 (Impact Factor: 2.177).

Sreejith.S, J. Ajayan, N.V.Uma Reddy, Devasenapati S Babu and Rebelli Shashank, “Analysis of Covid-19 CT chest image classification using Dl4jMlp classifier and Multilayer Perceptron in WEKA Environment”, Current Medical Imaging, Volume 160, 107397, 2023 (Impact Factor: 1.315).

C Reeda Lenus, M Haris, C Sheeja Herobin Rani, TS Arun Samuel, J Ajayan, “A Non-linear Circuit Model For Silicon Tunnel Field-Effect Transistors”, Journal of Electronic Materials, Springer, Volume 160, 107397, 2023 (Impact Factor: 2.047).

J. Ajayan, P. Mohankumar, R. Mathew, L. R. Thoutam, B. K. Kaushik and D. Nirmal, "Organic Electrochemical Transistors (OECTs): Advancements and Exciting Prospects for Future Biosensing Applications," IEEE Transactions on Electron Devices, Volume 160, 107397, 2023 (Impact Factor: 3.220).

Aruna Kumari Neelam, Bharath Sreenivasulu Vakkalakula, J. Ajayan, Janardhanreddy T and Prithvi Pothupogu, “Spacer Engineering on Nanosheet Field Effect Transistor towards Device and Circuit Perspective”, ECS Journal of Solid State Science and Technology (IOP Science), Volume 12, Number 3, 035006, 2023 (Impact Factor: 2.070).

S. Sreejith, L.M.I. Leo Joseph, Sreedhar Kollem, V.T. Vijumon, J. Ajayan, “Biodegradable sensors: A comprehensive review, Measurement, Volume 219, 113261, 2023. (Impact factor: 5.600).